Attopsemi Technology Presented “I-fuse: Dream OTP Finally Comes True” and won the best Innovative IP award on IP SoC 2019 China
Hsinchu, Taiwan –September 18, 2019
Attopsemi Technology attended D&R IP SoC Day on September 12, 2019 in Shanghai, China and provided a talk “I-fuse™: Dream OTP Finally Comes True” and won the best Innovative IP award.
In a well-received speech during the Technical Session, Shine Chung, Chairman of Attopsemi, presented the topic “I-fuse™: Dream OTP Finally Comes True” In the OTP(One-Time Programmable) IP market. Defying the conventional wisdom of breaking a fuse to maintain a permanent programmed state forever, Attopsemi’s I-fuse™ is actually a “non-breaking” fuse. “I don’t mind to break a fuse, but I do care about breaking a fuse by explosion”, said Shine Chung, Chairman of Attopsemi. “The I-V curve of programming a fuse after the break point actually show the behavior is more like an explosion. The SEM photos do confirm this. After explosion, debris can be created and micro-bridged again and become shorts to cause severe reliability problems.” “On the other hand, the I-V curves showed very smooth and repeatable curves, if the programming is below the break point and above the electromigration threshold,” further explained by Shine Chung.
With a twist of mindset, all the good attributes of an OTP show up. Program current/voltage can be lower. Cell/IP size can be smaller. High temperature, high reliability, and high data security can be achieved because of less damage to the fuse body. The program voltage can be inlined with I/O voltages, or can even be core voltages with some area penalties. In fact, I-fuse™ is more like a logic device that can be read at sub-VDD and consume only 1/100 of read energy, comparing with the conventional sensing, for energy harvest. I-fuse™ can also be built as bit cell in any standard cell libraries so that low-bit-count I-fuse™ OTP can be built by standard logic design flow.
Comparing with the other OTP technologies on 22nm and beyond, I-fuse™ can be programmed at 1.0V, while the other anti-fuses need 4-5V to program. I-fuse™ can be programmed at 1.0mA, while the eFuse needs up to 100mA to program.
A dream OTP, I-fuse™, finally comes true.
Dream OTP Finally Comes True.
Shine Chung, Chairman of Attopsemi (left) Presented “I-fuse™: Dream OTP Finally Comes True” and won the best IP prize in IP SoC 2019 China.
https://www.design-reuse-embedded.com/ipsocdays/ipsocdays2019/china2019/files/bio/BestPrize.jsp